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Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (Grant No. 61634008) and Youth Innovation Promotion Association CAS (Grant No. 2014101).

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Authors and Affiliations

  1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China

    Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li & Ming Liu

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Yannan Xu

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  1. Yannan Xu
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  2. Jinshun Bi
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  3. Gaobo Xu
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  4. Kai Xi
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  5. Bo Li
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  6. Ming Liu
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Corresponding author

Correspondence to Jinshun Bi.

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The authors declare that they have no conflict of interest.

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Xu, Y., Bi, J., Xu, G. et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci. China Inf. Sci. 60, 120401 (2017). https://doi.org/10.1007/s11432-017-9239-5

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  • DOI: https://doi.org/10.1007/s11432-017-9239-5